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  1/7 april 2004  high speed: t pd = 8ns (typ.) at v cc =6v  low power dissipation: i cc =1 a(max.) at t a =25c  high noise immunity: v nih =v nil = 28% v cc (min.)  symmetrical output impedance: |i oh |=i ol =4ma(min)  balanced propagation delays: t plh ? t phl  wide operating voltage range: v cc (opr) = 2v to 6v  pin and function compatible with 54 series 32  space grade-1: esa scc qualified  50 krad qualified, 100 krad available on request  no sel under high let heavy ions irradiation  device fully compliant with scc-9201-111 description them54hc32isanhighspeedcmosquad 2-input or gate fabricated with silicon gate c 2 mos technology. the internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. all inputs are equipped with protection circuits against static discharge and transient excess voltage. m54hc32 rad-hard quad 2-input or gate pin connection order codes package fm em dilc m54hc32d m54hc32d1 fpc m54hc32k M54HC32K1 dilc-14 fpc-14
m54hc32 2/7 iec logic symbols input and output equivalent circuit pin description truth table absolute maximum ratings absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied pin n symbol name and function 1, 4, 9, 12 1a to 4a data inputs 2, 5, 10, 13 1b to 4b data inputs 3, 6, 8, 11 1y to 4y data outputs 7 gnd ground (0v) 14 v cc positive supply voltage aby lll lhh hlh hhh symbol parameter value unit v cc supply voltage -0.5 to +7 v v i dc input voltage -0.5 to v cc +0.5 v v o dc output voltage -0.5 to v cc +0.5 v i ik dc input diode current 20 ma i ok dc output diode current 20 ma i o dc output current 25 ma i cc or i gnd dc v cc or ground current 50 ma p d power dissipation 300 mw t stg storage temperature -65 to +150 c t l lead temperature (10 sec) 265 c
m54hc32 3/7 recommended operating conditions dc specifications ac electrical characteristics (c l = 50 pf, input t r =t f =6ns) symbol parameter value unit v cc supply voltage 2to6 v v i input voltage 0 to v cc v v o output voltage 0 to v cc v t op operating temperature -55 to 125 c t r ,t f input rise and fall time v cc =2.0v 0 to 1000 ns v cc =4.5v 0 to 500 ns v cc =6.0v 0 to 400 ns symbol parameter test condition value unit v cc (v) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. v ih high level input voltage 2.0 1.5 1.5 1.5 v 4.5 3.15 3.15 3.15 6.0 4.2 4.2 4.2 v il low level input voltage 2.0 0.5 0.5 0.5 v 4.5 1.35 1.35 1.35 6.0 1.8 1.8 1.8 v oh high level output voltage 2.0 i o =-20 a 1.9 2.0 1.9 1.9 v 4.5 i o =-20 a 4.4 4.5 4.4 4.4 6.0 i o =-20 a 5.9 6.0 5.9 5.9 4.5 i o =-4.0 ma 4.18 4.31 4.13 4.10 6.0 i o =-5.2 ma 5.68 5.8 5.63 5.60 v ol low level output voltage 2.0 i o =20 a 0.0 0.1 0.1 0.1 v 4.5 i o =20 a 0.0 0.1 0.1 0.1 6.0 i o =20 a 0.0 0.1 0.1 0.1 4.5 i o =4.0 ma 0.17 0.26 0.33 0.40 6.0 i o =5.2 ma 0.18 0.26 0.33 0.40 i i input leakage current 6.0 v i =v cc or gnd 0.1 1 1 a i cc quiescent supply current 6.0 v i =v cc or gnd 11020 a symbol parameter test condition value unit v cc (v) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. t tlh t thl output transition time 2.0 30 75 95 110 ns 4.5 8 15 19 22 6.0 7 13 16 19 t plh t phl propagation delay time 2.0 24 75 95 110 ns 4.5 9 15 19 22 6.0 8 13 16 19
m54hc32 4/7 capacitive characteristics 1) c pd is defined as the value of the ic?s internal equivalent capacitance which is calculated from the operating current consumption without load. (refer to test circuit). average operating current can be obtained by the following equation. i cc(opr) =c pd xv cc xf in +i cc /4 (per gate) test circuit c l = 50pf or equivalent (includes jig and probe capacitance) r t =z out of pulse generator (typically 50 ? ) waveform: propagation delay time (f=1mhz; 50% duty cycle) symbol parameter test condition value unit v cc (v) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. c in input capacitance 5.0 5 10 10 10 pf c pd power dissipation capacitance (note 1) 5.0 21 pf
m54hc32 5/7 dim. mm. inch min. typ max. min. typ. max. a 2.1 22.54 0.083 0.100 a1 3.00 3.70 0.118 0.146 a2 0.63 0.88 1.14 0.025 0.035 0.045 b 1.82 2.03 2.39 0.072 0.080 0.094 b 0.40 0.45 0.50 0.016 0.018 0.020 b1 0.20 0.254 0.30 0.008 0.010 0.012 d 18.79 19.00 19.20 0.740 0.748 0.756 e 7.36 7.62 7.87 0.290 0.300 0.310 e1 2.54 0.100 e2 15.11 15.24 15.37 0.595 0.600 0.605 e3 7.62 7.87 8.12 0.300 0.310 0.320 f 7.11 7.75 0.280 0.305 i 3.70 0.146 k 10.90 12.1 0.429 0.476 l 1.14 1.27 1.5 0.045 0.050 0.059 dilc-14 mechanical data 0016173h
m54hc32 6/7 dim. mm. inch min. typ max. min. typ. max. a 6.75 6.91 7.06 0.266 0.272 0.278 b 9.76 9.95 10.14 0.384 0.392 0.399 c 1.49 1.95 0.059 0.077 d 0.10 0.127 0.15 0.004 0.005 0.006 e 7.50 7.62 7.75 0.295 0.300 0.305 f 1.27 0.050 g 0.38 0.43 0.48 0.015 0.017 0.019 h 6.0 0.236 l 18.75 22.0 0.738 0.866 m 0.38 0.015 n 4.31 0.170 fpc-14 mechanical data 016029e 1 7 8 14 f g d h a b m n h c l e
m54hc32 7/7 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com


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